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Algorithm for Calculating the Initial Defect Structure of Semiconductor Silicon

Received: 5 June 2017     Accepted: 21 June 2017     Published: 28 November 2017
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Abstract

An algorithm for calculating the defect structure of semiconductor silicon crystals was proposed. The proposed approach makes it possible to calculate the sizes, distribution densities of grown-in microdefects at any point of the crystal. Calculations are performed by using and analyzing the thermal conditions of crystal growth in the temperature range from 1683 K to 300 K. The algorithm flowchart is given.

Published in Engineering and Applied Sciences (Volume 2, Issue 5)
DOI 10.11648/j.eas.20170205.11
Page(s) 77-88
Creative Commons

This is an Open Access article, distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution and reproduction in any medium or format, provided the original work is properly cited.

Copyright

Copyright © The Author(s), 2017. Published by Science Publishing Group

Keywords

Semiconductor Silicon, Precipitates, Molecular Potential, Grown-in Microdefects, Microvoids, Dislocation Loops, Algorithm

References
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Cite This Article
  • APA Style

    Vitalyi Igorevich Talanin, Igor Evgenievich Talanin, Vladislav Igorevich Lashko. (2017). Algorithm for Calculating the Initial Defect Structure of Semiconductor Silicon. Engineering and Applied Sciences, 2(5), 77-88. https://doi.org/10.11648/j.eas.20170205.11

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    ACS Style

    Vitalyi Igorevich Talanin; Igor Evgenievich Talanin; Vladislav Igorevich Lashko. Algorithm for Calculating the Initial Defect Structure of Semiconductor Silicon. Eng. Appl. Sci. 2017, 2(5), 77-88. doi: 10.11648/j.eas.20170205.11

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    AMA Style

    Vitalyi Igorevich Talanin, Igor Evgenievich Talanin, Vladislav Igorevich Lashko. Algorithm for Calculating the Initial Defect Structure of Semiconductor Silicon. Eng Appl Sci. 2017;2(5):77-88. doi: 10.11648/j.eas.20170205.11

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  • @article{10.11648/j.eas.20170205.11,
      author = {Vitalyi Igorevich Talanin and Igor Evgenievich Talanin and Vladislav Igorevich Lashko},
      title = {Algorithm for Calculating the Initial Defect Structure of Semiconductor Silicon},
      journal = {Engineering and Applied Sciences},
      volume = {2},
      number = {5},
      pages = {77-88},
      doi = {10.11648/j.eas.20170205.11},
      url = {https://doi.org/10.11648/j.eas.20170205.11},
      eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.eas.20170205.11},
      abstract = {An algorithm for calculating the defect structure of semiconductor silicon crystals was proposed. The proposed approach makes it possible to calculate the sizes, distribution densities of grown-in microdefects at any point of the crystal. Calculations are performed by using and analyzing the thermal conditions of crystal growth in the temperature range from 1683 K to 300 K. The algorithm flowchart is given.},
     year = {2017}
    }
    

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  • TY  - JOUR
    T1  - Algorithm for Calculating the Initial Defect Structure of Semiconductor Silicon
    AU  - Vitalyi Igorevich Talanin
    AU  - Igor Evgenievich Talanin
    AU  - Vladislav Igorevich Lashko
    Y1  - 2017/11/28
    PY  - 2017
    N1  - https://doi.org/10.11648/j.eas.20170205.11
    DO  - 10.11648/j.eas.20170205.11
    T2  - Engineering and Applied Sciences
    JF  - Engineering and Applied Sciences
    JO  - Engineering and Applied Sciences
    SP  - 77
    EP  - 88
    PB  - Science Publishing Group
    SN  - 2575-1468
    UR  - https://doi.org/10.11648/j.eas.20170205.11
    AB  - An algorithm for calculating the defect structure of semiconductor silicon crystals was proposed. The proposed approach makes it possible to calculate the sizes, distribution densities of grown-in microdefects at any point of the crystal. Calculations are performed by using and analyzing the thermal conditions of crystal growth in the temperature range from 1683 K to 300 K. The algorithm flowchart is given.
    VL  - 2
    IS  - 5
    ER  - 

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Author Information
  • Department of Computer Science & Software Engineering, Institute of Economics & Information Technologies, Zaporozhye, Ukraine

  • Department of Computer Science & Software Engineering, Institute of Economics & Information Technologies, Zaporozhye, Ukraine

  • Department of Computer Science & Software Engineering, Institute of Economics & Information Technologies, Zaporozhye, Ukraine

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